Our conductive SiC substrates combine low resistivity, low defect density, high homogeneity, superior crystal quality, and high thermal conductivity to enable devices with low power dissipation, high-frequency operation, and good thermal stability.

Silicon Carbide, often abbreviated as SiC, is a compound of silicon and carbon. As a substrate, it serves as the foundation on which devices or circuits are formed. SiC substrates provide the ideal platform for power devices due to their unique physical and electronic properties.

Offering n-type conductive SiC products and a variety of SiC epitaxy options, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors.

Silicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method.

N-TYPE SiC SUBSTRATE The Materials Business Unit produces an assortment of n-type conductive SiC products. Wolfspeed's industry-leading, high-volume platform process provides our customers with the highest degree of material quality, supply assurance and economies of scale. Part Number Description W4NRG4C-C1-U200

May 30, 2023 · After more than two decades producing SOI substrates, Soitec announced in 2019 that they would apply their Smart Cut(TM) process to SiC, to produce “engineered substrates” that would address the “challenges related to supply, yield and cost of silicon carbide substrates”.

Semi-insulating Silicon Carbide (SiC) substrates are specialized materials used for high-power, high-frequency, and radiation-resistant electronic applications. Unlike conductive SiC, semi-insulating SiC has high resistivity (10⁶ – 10⁹ Ω·cm), making it ideal for devices requiring electrical isolation and thermal stability.

SiC Epitaxy. Accelerate time-to-market, reduce costs, and improve device performance by building on high-performance SiC epitaxial wafers from Coherent in up to 200 mm diameter.

The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high power and high frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices.

Jan 24, 2023 · In this paper, we concentrate on the three types SiC crystals, n-type, p-type, and semi-insulating, indicating the development of Shandong University for crystal growth, defects and resistivity...